1N60P Datasheet, PDF (1/2 Pages) Semtech Corporation – POINT CONTACT GERMANIUM DIODE

DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
1N60P
TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES
FEATURES
* Metal silicon junction, majority carrier conduction.
* High current capability, low forward voltage drop.
* Extremely low reverse current IR
* Ultra speed switching characteristics
* Small temperature coefficient of forward characteristics
* Satisfactory Wave detection efficiency
* For use in RECORDER, TV, RADIO, TELEPHONE as
detectors, super high speed switching circuits, small
current rectifier
MECHANICAL DATA
* Case: DO-35 glass case
* Polarity: color band denotes cathode end
* Weight: 0.13 grams approx.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DO-35
1.0(25.4)
MIN.
.165(4.2)
MAX.
1.0(25.4)
MIN.
.020 _TYP.
(0.52)
.079
MAX.
(2.0)
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
PARAMETERS
SYMBOL
VALUE
UNITS
ZeneRepetitive Peak Reverse Voltage
Forward Continuous Current
TA = 2 5^o C
Peak Forward Surge Current(t=1S)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
VRRM
IF
IFSM
TSTG/ TJ
TL
45
50
500
-65 to +125
230
Volts
mA
mA
o_C
o_C
ELECTRICAL CHARACTERISTICS
PARAMETERS
Forward Voltage
Reverse Current
TEST CONDITIONS
IF =1mA
IF =200mA
VR= 1 5 V
SYMBOL
VF
IR
VALUE
T Y P.
MAX.
0.24
0.5
0.65
1.0
0.5
1.0
UNITS
Volts
µA
Junction Capacitance
Detection Efficiency
VR=10V f=1MHz
CJ
6.0
pF
VI =3V f=30MHz CL=10pF RL=3.8KΩ
η
60
%
Reverse Recovey time
IF =IR=1mA Irr =1mA RC=100Ω
trr
Junction Ambient Thermal Resistance
RθJ A
400
1
ns
o_{C / W}