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| SS8550 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. | |||
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TO-92 Plastic-Encapsulate Transistors
SS8550 TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
PC : 1 W (TA=25â)
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-100uA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-0.1mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-0.1 μA
Emitter cut-off current
ICEO
VCE=-20V, IE=0
-0.1 μA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.1 uA
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
85
400
40
Collector-emitter saturation voltage
VCE(sat) IC=-800mA, IB=-80mA
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
-1.2
V
Base-emitter voltage
VBE(on) VCE=-1V, IC=-10mA
-1
V
Out capacitance
Cob VCB=-10V, IE=0mA,f=1MHZ
20
pF
Transition frequency
fT
VCE=-10V, IC=-50mA,f=-30MHZ
100
MHz
CLASSIFICATION OF hFE(2)
Rank
Range
B
85-160
C
120-200
D
160-300
D3
300-400
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