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| SS8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (NPN) | |||
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TO-92 Plastic-Encapsulate Transistors
SS8050 TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
PCM : 1 W
:2W
(TA=25â)
(TC=25â)
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC=0.1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=40V, IE=0
Emitter cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1) VCE=1V, IC=100mA
85
hFE(2) VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB=80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
Base-emitter voltage
VBE
VCE=1V, IC=10mA
Transition frequency
fT
VCE=10V, IC=50mA,f=30MHZ
100
123
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.5
V
1.2
V
1
V
MHz
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
C
120-200
D
160-300
D3
300-400
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