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| S9014 Datasheet, PDF (1/2 Pages) Weitron Technology – NPN General Purpose Transistors | |||
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TO-92 Plastic-Encapsulate Transistors
S9014 TRANSISTOR (NPN)
FEATURES
z High total power dissipation.(PC=0.45W)
z High hFE and good linearity
z Complementary to S9015
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
45
5
0.1
0.45
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
V(BR)CBO IC=100μA, IE=0
V(BR)CEO IC= 1mA, IB=0
V(BR)EBO IE=100μA, IC=0
ICBO
VCB=50V, IE=0
ICEO
VCE=35V, IB=0
IEBO
VEB= 5V, IC=0
hFE
VCE=5V, IC= 1mA
VCE(sat) IC=100mA, IB= 5mA
VBE(sat)
fT
IC=100mA, IB= 5mA
VCE=5V, IC= 10mA
f=30MHz
MIN
50
45
5
60
150
CLASSIFICATION OF hFE(1)
Rank
A
Range
60-150
B
100-300
C
200-600
123
TYP
MAX UNIT
V
V
V
0.1
μA
0.1
μA
0.1
μA
1000
0.3
V
1
V
MHz
D
400-1000
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