S9013 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PLASTIC ENCAPSULATE TRANSISTORS

TO-92 Plastic-Encapsulate Transistors
S9013 TRANSISTOR (NPN)
TO-92
FEATURE
z Complementary to S9012
z Excellent hFE linearity
MAXIMUM RATINGS T_A=25℃ unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
500
625
150
-55-150
Units
V
V
V
mA
mW
℃
℃
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
Test conditions
V(BR)_CBO I_C= 100μA , I_E=0
V(BR)_CEO I_C= 1mA , I_B=0
V(BR)_EBO I_E= 100μA , I_C=0
I_CBO
V_CB= 40V , I_E=0
I_CEO
V_CE=20V , I_E=0
I_EBO
V_EB= 5V, I_C=0
h_FE(1)
V_CE=1V, I_C=50mA
h_FE(2)
V_CE=1V, I_C= 500mA
V_CE(sat)
I_C= 500mA, I_B= 50mA
V_BE(sat)
I_C= 500mA, I_B= 50mA
MIN TYP MAX UNIT
40
V
25
V
5
V
0.1
μA
0.1
μA
0.1
μA
64
400
40
0.6
V
1.2
V
Transition frequency
CLASSIFICATION OF h_FE(1)
Rank
D
E
Range
64-91
78-112
f_T
V_CE=6V,I_C=20mA,f=30MHz
150
F
96-135
G
112-166
H
144-202
I
190-300
MHz
J
300-400