 English |
|
|
|
|
|
|
|
| MPS2907A Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR) | |||
| |||
|
TO-92 Plastic-Encapsulate Transistors
MPS2907A TRANSISTOR (PNP)
TO-92
FEATURES
Complementary NPN Type available (MPS2222A)
1. EMITTER
2. BASE
MAXIMUM RATINGS (TA=25â unless otherwise noted)
3. COLLECTOR
Symbol
Parameter
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
-60
-60
-5
-0.6
0.625
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
CLASSIFICATION OF hFE(2)
Rank
Range
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
td
tr
tS
tf
Test conditions
IC=-10μA,IE=0
IC=-10mA,IB=0
IE=-10μA,IC=0
VCB=-50V,IE=0
VCE=-30V,VEB(off)=-0.5V
VEB=-3V,IC=0
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,f=100MHz
VCC=-30V,Ic=-150mA,IB1=-15mA
VCC=-6V,Ic=-150mA,
IB1=IB2=-15mA
L
100-200
MIN TYP
-60
-60
-5
78
100
52
200
H
200-300
123
MAX
-10
-50
-10
300
-0.4
-0.67
-1
-1.2
10
25
225
60
UNIT
V
V
V
nA
nA
nA
V
V
V
V
MHz
nS
nS
nS
nS
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese