MMBTA42 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN high-voltage transistor

SOT-23 Plastic-Encapsulate Transistors
MMBTA42 TRANSISTOR (NPN)
FEATURES
z High breakdown voltage
z Low collector-emitter saturation voltage
z Complementary to MMBTA92(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MARKING:1D
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Collector-Base Voltage
300
V
Collector-Emitter Voltage
300
V
Emitter-Base Voltage
5
V
Collector Current -Continuous
0.3
A
Collector Power Dissipation
0.35
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol Test conditions
V_(BR)CBO I_C=100μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=100μA,I_C=0
I_CBO
V_CB=200V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE(1) V_CE=10V,I_C=1mA
h_FE(2) V_CE=10V,I_C=10mA
h_FE(3) V_CE=10V,I_C=30mA
V_CE(sat) I_C=20mA,I_B=2mA
V_BE(sat) I_C=20mA,I_B=2mA
f_T
V_CE=20V,I_C=10mA,f=30MHz
MIN TYP MAX UNIT
300
V
300
V
5
V
0.25 μA
0.1
μA
60
100
200
60
0.2
V
0.9
V
50
MHz