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| MMBT5401 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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SOT-23 Plastic-Encapsulate Transistors
MMBT5401 TRANSISTOR (PNP)
FEATURES
z Complementary to MMBT5551
z Ideal for medium power amplification and switching
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
-
MARKING: 2L
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-0.6
0.3
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
V(BR)CBO IC= -100μA, IE=0
V(BR)CEO IC= -1mA, IB=0
V(BR)EBO IE= -10μA, IC=0
ICBO
VCB=-120 V , IE=0
IEBO
VEB=-4V , IC=0
hFE1
VCE= -5V, IC= -1mA
hFE2
VCE= -5V, IC=-10mA
hFE3
VCE= -5V, IC=-50mA
VCE(sat) IC=-50 mA, IB= -5mA
VBE(sat) IC= -50 mA, IB= -5mA
VCE= -5V, IC= -10mA
fT
f=30MHz
MIN
-160
-150
-5
80
100
50
100
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
300
-0.5
V
-1
V
MHz
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