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| MMBT3906 Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP switching transistor | |||
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SOT-23 Plastic-Encapsulate Transistors
MMBT3906 TRANSISTOR (PNP)
SOT-23
FEATURES
z As complementary type, the NPN transistor
MMBT3904 is Recommended
z Epitaxial planar die construction
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: 2A
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.2
0.3
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
CLASSIFICATION OF hFE1
Rank
O
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
IC= -10μA,IE=0
IC= -1mA, IB=0
IE=-10μA, IC=0
VCB= -40V, E=0
VCE=-30V,VBE(off)=-3V
VEB= -5V, IC=0
VCE=-1V, IC=-10mA
VCE= -1V, IC=-50mA
VCE= -1V, IC=-100mA
IC=-50mA, IB=-5mA
IC=- 50mA, IB=- 5mA
VCE=-20V, IC=-10mA, f=100MHz
VCC=-3.0V,VBE=-0.5V
IC=-10mA,IB1=-1.0mA
VCC=-3.0V,IC=-10mA
IB1=IB2=-1.0mA
-40
-40
-5
100
60
30
250
Y
Range
100-200
200-300
MAX
-0.1
-50
-0.1
300
-0.4
-0.95
35
35
225
75
UNIT
V
V
V
μA
nA
μA
V
V
MHz
nS
nS
nS
nS
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