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| MMBT3904 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor | |||
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SOT-23 Plastic-Encapsulate Transistors
MMBT3904 TRANSISTOR (NPN)
FEATURES
z As complementary type the PNP transistor MMBT3906 is recommended
z Epitaxial planar die construction
MARKING: 1AM
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Value
60
40
6
200
200
625
150
-55 to +150
Units
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
VCBO
VCEO
VEBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
Test conditions
IC= 10μA, IE=0
IC= 1mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
VCE=30V,VBE(off)=3V
VEB=5V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC= 50mA
VCE=1V, IC= 100mA
IC=50mA, IB= 5mA
IC= 50mA, IB= 5mA
VCE= 20V, IC= 10mA,f=100MHz
VCC=3V,VBE=-0.5V
IC=10mA, IB1=-IB2=1.0mA
VCC=3.0V,IC=10mAdc
IB1=-IB2=1mA
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MIN MAX UNIT
60
V
40
V
6
V
0.1 μA
50 nA
0.1 μA
100 400
60
30
0.3
V
0.95
V
300
MHz
35
nS
35
nS
200
nS
50
nS
CLASSIFICATION OF hFE(1)
Rank
O
Range
100-200
Y
200-300
G
300-400
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