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| A92 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ） | |||
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TO-92 Plastic-Encapsulate Transistors
A92 TRANSISTOR (PNP)
TO-92
FEATURES
High voltage
1.EMITTER
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
2.BASE
3.COLLECTOR
VCBO Collector-Base Voltage
-300
V
VCEO Collector-Emitter Voltage
-300
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
PC Collector Power Dissipation
625
mW
Tj
Junction Temperature
150
â
Tstg Storage Temperature
-55-150
â
RÓ¨JA Thermal Resistance, junction to Ambient
200
â/mW
RÓ¨JC Thermal Resistance, unction to Case
83.3
â/mW
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB= -200 V IE=0
VEB= -5 V, IC=0
VCE= -10 V, IC=- 1 mA
VCE= -10V, IC = -10 mA
VCE= -10 V, IC= -80 mA
IC= -20 mA, IB= -2 mA
IC= -20 mA, IB= -2 mA
VCE= -20 V, IC= -10 mA
f = 30MHz
-300
-300
-5
60
80
60
50
123
MAX
-0.25
-0.1
UNIT
V
V
V
μA
μA
250
-0.2
V
-0.9
V
MHz
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-250
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