 English |
|
|
|
|
|
|
|
| A733 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
| |||
|
SOT-23 Plastic-Encapsulate Transistors
A733 TRANSISTOR (PNP)
SOT-23
FEATURE
z Collector-Base Voltage
z Complement to C945
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS(TA=25â unless otherwise noted)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
PC
Collector Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
Value
-60
-50
-5
-150
200
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Cob
NF
Test conditions
IC= -5uA,IE=0
IC= -1mA , IB=0
IE= -50uA, IC=0
VCB= -60 V , IE=0
VEB= -5 V , IC=0
VCE= -6 V, IC= -1mA
IC= -100mA, IB=- 10mA
VCE=-6V,IC=-1.0mA
VCE=-6V,IC=-10mA
VCB=-10V,IE=0,f=1MHZ
VCE=-6V,IC=-0.3mA,
Rg=10kâ¦,f=100HZ
MIN
-60
-50
-5
120
-0.58
50
TYP
-0.18
-0.62
4.5
MAX UNIT
V
V
V
-0.1 uA
-0.1 uA
475
-0.3
V
-0.68 V
MHz
7
pF
6
20
dB
CLASSIFICATION OF hFE
Rank
L
H
Range
120-220
220-475
MARKING
CS
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese