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| A44 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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TO-92 Plastic-Encapsulate Transistors
A44 TRANSISTOR (NPN)
FEATURES
y High voltage
TO-92
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
400
VCEO
Collector-Emitter Voltage
400
VEBO
IC
PC
Tj
Tstg
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
5
0.2
0.625
150
-55 to +150
Units
V
V
V
A
W
â
â
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC= 100μA , IE=0
400
Collector-emitter breakdown voltage
V(BR)CEO IC= 1mA , IB=0
400
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
ICBO
VCB=400 V, IE=0
Collector cut-off current
ICEO
VCE=400 V
Emitter cut-off current
IEBO
VEB= 4V, IC=0
hFE (1)
VCE=10V , IC=10mA
80
DC current gain
hFE(2)
VCE=10V, IC=1mA
70
hFE(3)
VCE=10V, IC=100mA
40
hFE(4)
VCE=10V, IC=50mA
80
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-emitter sataration voltage
Transition frequency
VBE(sat)
IC=10mA, IB= 1mA
fT
VCE=20V, IC=10mA
f =30MHz
50
TYP
MAX
0.1
5
0.1
300
UNIT
V
V
V
μA
μA
μA
0.2
V
0.3
V
0.75
V
MHz
CLASSIFICATION OF hFE(1)
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-300
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