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| 8550S Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ） | |||
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TO-92 Plastic-Encapsulate Transistors
8550S TRANSISTOR (PNP)
FEATURE
Excellent hFE linearity
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Junction and Storage Temperature
Value
-40
-25
-5
-500
625
150
-55-150
Units
V
V
V
mA
mW
â
â
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Test conditions
IC= -100uA, IE=0
IC= -1mA, IB=0
IE= -100uA, IC=0
VCB= -40V, IE=0
VCE= -20V,IB=0
VEB= - 3V, IC=0
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=- 6V, IC=-20mA
f =30MHz
MIN
-40
-25
-5
85
50
150
TYP
MAX
-0.1
-0.1
-0.1
400
UNIT
V
V
V
uA
uA
uA
-0.6
V
-1.2
V
MHz
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
C
120-200
D
160-300
D3
300-400
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