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| 2SD1616A Datasheet, PDF (1/2 Pages) Micro Electronics – NPN SILICON TRANSISTOR | |||
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TO-92 Plastic-Encapsulate Transistors
2SD1616A TRANSISTOR (NPN)
TO-92
FEATURE
Power dissipation
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
120
60
6
1
750
150
-55 to150
Units
V
V
V
A
mW
â
â
1. EMITTER
2. COLLECTOR
3. BSAE
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC= 10μA , IE=0
120
V
Collector-emitter breakdown voltage
V(BR)CEO IC= 2mA , IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO IE= 10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V, IC=0
0.1
μA
DC current gain
hFE1
VCE=2 V, IC= 100mA
135
600
hFE2
VCE=2 V, IC= 1A
81
Collector-emitter saturation voltage *
VCE(sat) IC= 1A, IB=50mA
0.3
V
Base-emitter saturation voltage *
VBE(sat) IC= 1A, IB=50mA
1.2
V
Base-emitter voltage *
VBE
VCE= 2V, IC=50mA
0.6
0.7
V
Transition frequency
fT
VCE=2 V, IC= 100mA
100
MHz
Output capacitance
Cob
VCB=10 V,IE= 0, f=1MHz
19
pF
Turn on time
Storage time
Fall time
ton
tS
Vcc=10V, IC=100mA,
IB1=-IB2=10mA
tF
0.07
μs
0.95
μs
0.07
μs
*pulse test: PWâ¤350µS, δâ¤2%.
CLASSIFICATION OF hFE1
Rank
L
K
U
Range
135-270
200-400
300-600
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