2SA684 Datasheet, PDF (1/3 Pages) Unisonic Technologies – PNP EPITAXIAL PLANAR TRANSISTOR

TO-92L Plastic-Encapsulate Transistors
2SA684 TRANSISTOR (PNP)
FEATURES
∙ Automatic insertion by radial taping possible.
· Complementary pair with 2SC1384.
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS(T_A=25℃ unless otherwise noted)
123
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-1
0.75
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
Test conditions
I_C=-10uA, I_E=0
I_C=-2mA, I_B=0
I_E=-10μA, I_C=0
V_CB=-20V, I_E=0
V_CE=-10V, I_C=-500mA
V_CE=-5V, I_C=-1A
I_C=-500mA, I_B=-50mA
I_C=-500mA, I_B=-50mA
V_CE=-10V, I_E=50mA, f=200MHz
V_CB=-10V, I_E=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-5
V
-0.1 μA
85
340
50
-0.2 -0.4
V
-0.85 -1.2
V
200
MHz
20
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Q
85-170
R
120-240
S
170-340