2N5401 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistor

TO-92 Plastic-Encapsulate Transistors
2N5401 TRANSISTOR (PNP)
FEATURE
z Switching and amplification in high voltage
z Applications such as telephony
z Low current(max. 600mA)
z High voltage(max.160v)
TO-92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-0.6
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(_BR)CBO
V_(BR)CEO
V(BR)_EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
f_T
Test conditions
I_C= -100μA, I_E=0
I_C= -1mA, I_B=0
I_E= -10μA, I_C=0
V_CB= -120 V, I_E=0
V_EB= -3V, I_C=0
V_CE= -5V, I_C=-1 mA
V_CE= -5V, I_C= -10 mA
V_CE= -5V, I_C=-50 mA
I_C= -50mA, I_B= -5 mA
I_C= -50mA, I_B= -5 mA
V_CE=-5V, I_C=-10mA
f =30MHz
MIN
-160
-150
-5
80
60
50
100
TYP MAX
-50
-50
240
-0.5
-1
300
UNIT
V
V
V
nA
nA
V
V
MHz