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| 2N3906 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor | |||
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TO-92 Plastic-Encapsulate Transistors
2N3906 TRANSISTOR (PNP)
TO-92
FEATURE
z PNP silicon epitaxial planar transistor for switching and
Amplifier applications
z As complementary type, the NPN transistor 2N3904 is
Recommended
z This transistor is also available in the SOT-23 case with
the type designation MMBT3906
1.EMITTER
2.BASE
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.2
0.625
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(sat)
fT
td
tr
ts
tf
Test conditions
IC = -10μA, IE=0
IC =-1mA , IB=0
IE= -10μA, IC=0
VCB= -40 V,IE=0
VCE= -30 V,VBE(off)=-3V
VEB= -5 V , IC=0
VCE=-1 V, IC= -10mA
VCE=-1 V, IC= -50mA
VCE=-1 V, IC= -100mA
IC= -50mA, IB= -5mA
IC= -50mA, IB= -5mA
VCE=-20V, IC= -10mA
f = 100MHz
VCC=-3V,VBE=-0.5V,
IC=-10mA,IB1=-1mA
VCC=-3V,Ic=-10mA
IB1=IB2=-1mA
MIN TYP
-40
-40
-5
100
60
30
250
123
MAX
-0.1
-50
-0.1
400
-0.4
-0.95
35
35
225
75
UNIT
V
V
V
μA
nA
μA
V
V
MHz
ns
ns
ns
ns
CLASSIFICATION OF hFE1
Rank
Range
O
100-200
Y
200-300
G
300-400
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