DS1245Y Datasheet, PDF (5/12 Pages) Dallas Semiconductor – 1024k Nonvolatile SRAM

AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
DS1245Y/AB
(V_CC=5V ±=5% for DS1245AB)
(t_A: See Note 10) (V_CC=5V ±=10% for DS1245Y)
DS1245AB-100 DS1245AB-120
DS1245Y-100 DS1245Y-120
SYMBOL MIN MAX MIN MAX UNITS NOTES
t_RC
100
120
ns
t_ACC
100
120
ns
t_OE
50
60
ns
t_CO
100
120
ns
t_COE
5
5
ns
5
t_OD
35
35
ns
5
t_OH
5
5
ns
t_WC
100
120
ns
t_WP
75
90
ns
3
t_AW
0
0
ns
t_WR1
5
5
t_WR2
15
15
ns
12
ns
13
t_ODW
35
35
ns
5
t_OEW
5
5
ns
5
t_DS
40
50
ns
4
t_DH1
0
0
t_DH2
10
10
ns
12
ns
13
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