DS56 Datasheet, PDF (4/6 Pages) Dallas Semiconductor – Dual Temperature Comparator

ABSOLUTE MAXIMUM RATINGS*
Voltage on V_DD
Input Current at any pin
Package Input Current
Operating Temperature
Storage Temperature
ESD Susceptibility (Human Body Model)
Soldering Temperature (Note 2)
DS56
(GND-0.3V) to +7.0V
5.0 mA
20 mA
-40°C to +125°C
-55°C to 150°C
1kV
215°C for 60 seconds (Vapor Phase)
220°C for 15 seconds (IR)
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
The Dallas Semiconductor DS56 is built to the highest quality standards and manufactured for long-term
reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS56 is not exposed to environmental stresses, such as burn-in,
that some industrial applications require. For specific reliability information on this product, please
contact the factory in Dallas at [phone].
RECOMMENDED DC OPERATING CONDITIONS:
(-40°C to +125°C; 2.7V ≤V_DD ≤5.5V)
PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Supply Voltage
V_DD
2.7
5.5
V
1
DC ELECTRICAL CHARACTERISTICS:
Power Supply (Note 3)
PARAMETER SYMBOL CONDITION
Supply Current
I_DD
(-40°C to +125°C; 2.7V ≤V_DD ≤5.5V)
MIN TYP MAX UNITS NOTES
225
µA
DC ELECTRICAL CHARACTERISTICS:
Temperature Sensor (Note 3)
PARAMETER SYMBOL CONDITION
Trip Point
Accuracy
V_TEMP Accuracy
V_TEMP DC Offset
TP_ERR
T_ERR
-40°C≤T_A≤125°C
0°C≤T_A≤85°C
-40°C≤T_A≤125°C
0°C≤T_A≤85°C
T=0°C
Sensor Gain
Trip Point
Hysteresis
? V/? T
TP_HYST
Power Supply
Regulation
V_TEMP Output
Impedance
2.7V≤V_DD≤3.3V
3.0V≤V_DD≤5.5V
(-40°C to +125°C; 2.7V ≤V_DD ≤5.5V)
MIN TYP MAX UNITS NOTES
±3
±2
°C
4
±3
±2
°C
5
395
mV
6.25
mV/°C
3.0 5.0 7.0
°C
±2.3 mV
±0.3 mV/V
1500
Ω
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