DS1626 Datasheet, PDF (4/13 Pages) Dallas Semiconductor – High-Precision 3-Wire Digital Thermometer and Thermostat

DS1626/DS1726
EEPROM AC ELECTRICAL CHARACTERISTICS
(V_DD = 2.7V to 5.5V; T_A = -55°C to +125°C.)
PARAMETER
SYMBOL CONDITIONS MIN TYP MAX UNITS
EEPROM Write Cycle Time
t_wr
4
10
ms
EEPROM Writes
N_EEWR -55°C to +55°C
50k
Writes
EEPROM Data Retention
t_EEDR -55°C to +55°C
10
Years
AC ELECTRICAL CHARACTERISTICS
(V_DD = 2.7V to 5.5V; T_A = -55°C to +125°C.)
PARAMETER
SYMBOL CONDITIONS MIN TYP MAX UNITS
9-bit
93.75
Temperature Conversion Time
t_TC
10-bit
11-bit
187.5
375
ms
12-bit
750
Data In to Clock Setup
t_DC
(Note 5)
35
ns
Clock to Data In Hold
t_CDH (Note 5)
40
ns
Clock to Data Out Delay
t_CDD (Notes 5, 6)
150
ns
Clock Low/High Time
t_CL, t_CH (Note 5)
285
ns
Clock Frequency
f_CLK (Note 5)
0
1.75 MHz
Clock Rise/Fall Time
RST to Clock Setup
Clock to RST Hold
RST Inactive Time
t_R, t_F (Note 5)
t_RC
(Note 5)
100
t_CRH (Note 5)
40
t_RI
(Note 7)
125
500
ns
ns
ns
ns
Clock High to I/O Hi-Z
RST Low to I/O Hi-Z
CNV Pulse Width
t_CDZ (Note 5)
t_RDZ (Note 5)
t_CNV (Note 8)
250ns
50
ns
50
ns
500ms
I/O Capacitance
C_I/O
Input Capacitance
C_I
10
pF
5
pF
NOTES:
1) All voltages are referenced to ground.
2) See Figure 2 for TYPICAL OPERATING CURVES.
3) I_STBY, I_DD specified with DQ, CLK/CNV = V_DD and RST = GND.
4) Drift data is based on a 1000hr stress test at +125°C with V_DD = 5.5V.
5) See Timing Diagrams in Figure 3. All timing is referenced to 0.7 x V_DD and 0.3 x V_DD.
6) Load capacitance = 50pF.
7) t_RI must be 10ms minimum following any write command that involves the E² memory.
8) 250ns is the guaranteed minimum pulse width for a conversion to start, however, a smaller pulse
width may start a conversion.
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