DS1345W Datasheet, PDF (4/12 Pages) Dallas Semiconductor – 3.3V 1024k Nonvolatile SRAM with Battery Monitor

ABSOLUTE MAXIMUM RATINGS*
Voltage On Any Pin Relative To Ground
Operating Temperature
Storage Temperature
Soldering Temperature
DS1345W
-0.3V to +4.6V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
Power Supply Voltage
Logic 1
Logic 0
V_CC
3.0
3.3
V_IH
2.2
V_IL
0.0
MAX
3.6
V_CC
0.4
(T_A: See Note 10)
UNITS NOTES
V
V
V
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Input Leakage Current
I_IL
-1.0
I/O Leakage Current
CE ³ V_IH £ V_CC
I_IO
-1.0
Output Current @ 2.2V
I_OH
-1.0
Output Current @ 0.4V
I_OL
2.0
Standby Current CE = 2.2V
I_CCS1
Standby Current
CE = V_CC -0.2V
I_CCS2
Operating Current
I_CCO1
Write Protection Voltage
V_TP
2.8
(T_A: See Note 10) (V_CC = 3.3V ± 0.3V)
TYP MAX UNITS NOTES
+1.0
µA
+1.0
µA
mA
14
mA
14
50
250
µA
30
150
µA
50
mA
2.9
3.0
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
5
5
MAX
10
10
UNITS
pF
pF
(T_A = 25°C)
NOTES
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