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DS1249W Datasheet, PDF (4/8 Pages) Dallas Semiconductor – 3.3V 2048kb Nonvolatile SRAM
DS1249W
AC ELECTRICAL CHARACTERISTICS (TA: See Note 10; VCC = 3.3V ± 0.3V)
DS1249W-100 DS1249W-150
PARAMETER
SYMBOL MIN MAX MIN MAX UNITS NOTES
Read Cycle Time
tRC
100
150
ns
Access Time
tACC
100
150
ns
OE to Output Valid
tOE
50
70
ns
CE to Output Valid
tCO
100
150
ns
OE or CE to Output Active
tCOE
5
5
ns
5
Output High-Z from Deselection
tOD
35
35
ns
5
Output Hold from Address Change
tOH
5
5
ns
Write Cycle Time
tWC
100
150
ns
Write Pulse Width
tWP
75
100
ns
3
Address Setup Time
tAW
0
0
ns
Write Recovery Time
tWR1
5
5
tWR2
20
20
ns
12
ns
13
Output High-Z from WE
tODW
35
35
ns
5
Output Active from WE
tOEW
5
5
ns
5
Data Setup Time
tDS
40
60
ns
4
Data Hold Time
tDH1
0
0
ns
12
tDH2
20
20
ns
13
READ CYCLE
SEE NOTE 1
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