DS9503 Datasheet, PDF (3/3 Pages) Dallas Semiconductor – ESD Protection Diode with Resistors

PHYSICAL SPECIFICATIONS
Size
Weight
See mechanical drawing
0.5 grams
DS9503
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
Storage Temperature
Soldering Temperature
Continuous DC Current Through Package
–40°C to +85°C
–55°C to +125°C
260°C for 10 seconds
80 mA
∗ This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Leakage Current
I_L
Avalanche Voltage
V_AV
Trigger Voltage
V_TRIGGER
Trigger Current
I_TRIGGER
Holding Voltage
V_HOLD
Holding Current
I_HOLD
Forward Voltage (-10 mA)
V_F
Forward Current (-0.7V)
I_F
Maximum Peak Current
I_PP
Continuous Current Through Diode
I_CC
Isolation Resistance
R_I
MIN
7.4
5.5
30
CAPACITANCE
PARAMETER
SYMBOL
Junction Capacitance (5V)
C_J5
Junction Capacitance (0V)
C_J0
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction To Package
R_{Θ JC}
Junction To Ambient
R_{Θ JA}
NOTES:
1. All voltages are referenced from Cathode to Anode.
2. At 7.0V.
3. At 0.3 µA.
4. Typical values at room temperature.
5. See pulse specification.
MIN
MIN
3 of 3
TYP
30
9.0
600
-0.7
-10
2.0
5
TYP
40
70
TYP
(-40°C to +85°C)
MAX UNITS NOTES
100
nA
2
7.8
V
1,3
9.5
V
1
1000 mA
V
1
mA
-0.8
V
4
-100
mA
4
A
5
±80
mA
Ω
MAX
(t_A=25°C)
UNITS NOTES
pF
1
pF
1
MAX
75
200
UNITS
K/W
K/W
NOTES
102199