DS60 Datasheet, PDF (2/4 Pages) Dallas Semiconductor – Micro-Centigrade Temperature Sensor

ABSOLUTE MAXIMUM RATINGS*
Voltage on V_DD
Output Current
Operating Temperature
Storage Temperature
ESD Susceptibility (Human Body Model)
Soldering Temperature (Note 2)
DS60
GND -0.3V to +6.5V
5.0 mA
-40°C to +125°C
-55°C to +150°C
2kV
215°C for 60 seconds (Vapor Phase)
220°C for 15 seconds (IR)
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
The Dallas Semiconductor DS60 is built to the highest quality standards and manufactured for long-term
reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS60 is not exposed to environmental stresses, such as burn-in,
that some industrial applications require. For specific reliability information on this product, please
contact the factory in Dallas at (972) 371–4448.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
(-40°C to +125°C; 2.7V ≤V_DD ≤5.5V)
SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Supply Voltage
V_DD
2.7
5.5
V
1
DC ELECTRICAL CHARACTERISTICS:
Power Supply (Note 3)
PARAMETER SYMBOL CONDITION
Supply Current
I_DD
(-40°C to +125°C; 2.7V ≤V_DD ≤5.5V)
MIN TYP MAX UNITS NOTES
80 125
µA
DC ELECTRICAL CHARACTERISTICS:
Temperature Sensor and Voltage Output (Note 3)
PARAMETER
(-40°C to +125°C; 2.7V ≤V_DD ≤5.5V)
SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Thermometer Error
T_ERR
-40°C≤T_A
≤125°C
0°C≤T_A
≤85°C
±3
°C
4
±2
V_O DC Offset
Sensor Gain
∆V/∆T
T = 0°C
424
mV
1
6.0 6.25 6.5 mV/°C
Nonlinearity
±0.8
°C
5
Power Supply
2.7V≤V_DD
≤3.3V
±2.0 mV
Regulation
3.0V≤V_DD
≤5.5V
±0.25 mV/V
Sensor Drift
±0.25
°C
6
Output Impedance
800
Ω
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