DS3832C-311 Datasheet, PDF (1/18 Pages) Dallas Semiconductor – 3.3V, 32Mb Advanced NV SRAM with Clock

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DS3832C-311
3.3V, 32Mb Advanced NV SRAM
with Clock
FEATURES
§ 3.0V to 3.6V operation
§ Surface-mount nonvolatile (NV) RAM ball-grid
array (BGA) module construction
§ 1024k x 32 NV SRAM memory space and
separate 64 x 8 real-time clock (RTC)
memory space
§ RTC maintains hundredths of seconds,
seconds, minutes, hours, day, date, month,
and year with leap-year compensation valid
up to 2100
§ Removable backup power source provides
more than eight years of timekeeping and
data retention
§ Read and write access times as fast as 100ns for
NV SRAM memory and 200ns for RTC
§ Automatic data protection during power loss
§ Unlimited write-cycle endurance
§ Low-power CMOS operation
§ Battery monitor checks remaining capacity daily
§ Industrial temperature range of -40°C to
+85°C
PACKAGE OUTLINE
Top View
Bottom View
Side View
Side View
DESCRIPTION
The DS3832C-311 is a 1,048,576 x 32 advanced NV SRAM module with a 168-bump BGA pinout. The
highly integrated DS3832C-311 contains a 64-byte RTC, four 8Mb SRAMs, and control circuitry that
constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs, the DS3832C-
311 makes use of an attached DS3802 battery cap to maintain clock information and preserve stored data
while protecting that data by disallowing all memory accesses. Additionally, the DS3832C-311 has
dedicated circuitry for monitoring the status of V_CC and the status of an attached DS3802 battery cap.
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