DS3800 Datasheet, PDF (1/2 Pages) Dallas Semiconductor – Advanced NV SRAM Battery Cap

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PRELIMINARY
DS3800
Advanced NV SRAM Battery Cap
FEATURES
PIN ASSIGNMENT
Houses 400 mAh primary lithium battery
Snaps directly onto a surface–mounted 40mm
ball–grid array (BGA) Nonvolatile SRAM
module
Attaches after host BGA module has been
surface–mounted to protect lithium battery
from the high temperatures of reflow
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soldering
Maintains mechanical and electrical
connection with BGA module even during
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severe shock and vibration stresses
Four attachment flanges latch onto host BGA
module to provide strong, semi–permanent
attachment. Flanges can be broken off for cap _{ABSOLUTE MAXIMUM RATINGS}
removal
Industrial temperature range of –40°C to
+85°C
Operating Temperature
Non-Operating Temperature
-40°C to 85°C
-40°C to 85°C
attery Cap
BATTERY CHARACTERISTICS
Nominal Voltage
3 volts
Nominal Capacity
400 mAh
Chemistry
Li(CF)x
Data Retention Life
8 Years (25°C)
DESCRIPTION
The DS3800 Battery Cap is a snap–on lithium power source for Dallas Semiconductors 40mm ball–grid
array (BGA) Nonvolatile SRAM modules. After a host BGA module has been soldered in place and
cleaned, the DS3800 Battery Cap is snapped onto the module to serve as the secondary power supply.
The Battery Cap is keyed to prevent incorrect attachment and is designed to maintain mechanical and
electrical contact with its host module even during severe shock and vibration. Electrically, the DS3800
battery is connected to the host BGA module with gold–plated round pins in the Battery Cap inserted into
gold–plated receptacles on the BGA. Mechanically, four flanges on the DS3800 tightly grip the BGA
module board to prevent Cap removal, while corner features in the Cap prevent lateral movement of the
Cap while it is attached to its host BGA module.
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