DS2229 Datasheet, PDF (1/10 Pages) Dallas Semiconductor – Word-Wide 8 Meg SRAM Stik

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DS2229
Word-Wide 8 Meg SRAM Stik
FEATURES
Organized as a high density 512k x 16 bit
Stik^TM
Fast access time of 85 ns
Unlimited write cycles
Employs popular JEDEC standard 80-position
SIMM connector
Full ±10% operating range
Read cycle time equals write cycle time
Ultra-low standby current < 10 µA
Suitable for battery-backed applications
PIN ASSIGNMENT
DESCRIPTION
80-PIN SIP STIK
The DS2229 is an 8,388,608-bit low-power fully static Random Access Memory organized as a 524,888
word by 16 bits using CMOS technology. The device employs the popular JEDEC standard 80-pin SIMM
connection scheme with no additional circuitry required. The device operates from a single power supply
with a voltage input of 4.5 to 5.5 volts. The Chip Enable inputs ( CE0 , CE1 , CE2 , CE3 ) are used for
device selection and can be used in order to achieve the minimum standby current mode which facilitates
battery backup. The device provides a fast access time of 85 ns. The DS2229 maintains TTL levels over
input voltage range 4.5V to 5.5V. The DS2229 is JEDEC pin compatible (see Figure 1) with flash
EEPROM memory SIMM boards of similar density.
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