DS1210 Datasheet, PDF (1/6 Pages) Dallas Semiconductor – Nonvolatile Controller Chip

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DS1210
Nonvolatile Controller Chip
FEATURES
Converts CMOS RAMs into nonvolatile
memories
Unconditionally write protects when V_CC is
out of tolerance
Automatically switches to battery when
power-fail occurs
Space saving 8-pin DIP
Consumes less than 100 nA of battery current
Tests battery condition on power up
Provides for redundant batteries
Optional 5% or 10% power-fail detection
Low forward voltage drop on the V_CC switch
Optional 16-pin SOIC surface mount package
Optional industrial temperature range of
-40°C to +85°C
PIN ASSIGNMENT
VCCO 1
8 _VCCI
VBAT1 2
7 VBAT2
TOL 3
6 CEO
GND 4
5 CE
DS1210 8-pin DIP (300-mil)
See Mech. Drawings Section
NC
1
VCCO
2
NC
3
VBAT1
4
NC
5
TOL
6
NC
7
GND
8
16
NC
15
VCCI
14
NC
13
VBAT2
12
NC
11
CEO
10
NC
9
CE
DS1210S 16-pin SOIC (300-mil)
See Mech. Drawings Section
PIN DESCRIPTION
V_CCO
V_BAT1
TOL
- RAM Supply
- + Battery 1
- Power Supply Tolerance
GND
- Ground
CE
- Chip Enable Input
CEO
V_BAT2
V_CCI
NC
- Chip Enable Output
- + Battery 2
- + Supply
- No Connect
DESCRIPTION
The DS1210 Nonvolatile Controller Chip is a CMOS circuit which solves the application problem of
converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-of-tolerance
condition. When such a condition is detected, chip enable is inhibited to accomplish write protection and
the battery is switched on to supply the RAM with uninterrupted power. Special circuitry uses a low-
leakage CMOS process which affords precise voltage detection at extremely low battery consumption.
The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the
DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation
can be achieved.
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