SR102 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

SR102 THRU SR1100
CURRENT 1.0Ampere
VOLTAGE 20 to 100 Volts
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250 /10 seconds at terminals,
0.375" (9.5mm) lead length, 5lbs. (2.3Kg) tension
Mechanical Data
· Case : JEDEC DO-41 molded plastic body
· Terminals : Plated axial leads, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.012 ounce, 0.33 gram
DO-41
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
0.034(0.9)
0.028(0.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols SR102 SR103 SR104 SR105 SR106 SR108 SR1100 Units
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
80 100 Volts
Maximum RMS voltage
VRMS
14
21
28
35
42
56
70 Volts
Maximum DC blocking voltage
VDC
20
30
40
50
60
80 100 Volts
Maximum average forward rectified
I(AV)
current 0.375"(9.5mm) lead length(see Fig. 1)
1.0
Amp
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
IFSM
(JEDEC method)
Maximum instantaneous forward voltage
VF
at 1.0A (Note 1)
Maximum instantaneous reverse
TA=25
current at rated DC blocking
IR
voltage (Note1)
TA=100
Typical junction capacitance (Note 3)
CJ
Typical thermal resistance (Note 2)
R JA
R JL
40.0
Amps
0.55
0.70
0.75 0.83 Volts
1.0
mA
10
110
PF
50.0
/W
15.0
Operating junction temperature range
TJ
-65 to +125
-65 to +150
Storage temperature range
TSTG
-65 to +150
Notes:
(1) Pulse test: 300 S pulse width, 1% duty cycle
(2) Thermal resistance from junction to ambient P.C.B. mounted, with 1.5X1.5"(38X38mm) copper pads
(3) Measured 1.0MHz and reverse voltage of 4.0 volts