SBR5030 Datasheet, PDF (1/2 Pages) Daesan Electronics Corp. – CURRENT 50.0 AMPERES VOLTAGE 30 TO 60 VOLTS

SBR5030 THRU SBR5060
CURRENT 50.0Amperes
VOLTAGE 30 to 60 Volts
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
· High temperature soldering guaranteed:
250 /10 seconds, 0.17" (4.3mm) from case
Mechanical Data
· Case : JEDEC TO-3P molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
· Weight : 0.20ounce, 5.6 grams
TO-3P
.120(3.05)
.115(2.92)
DIA.
.180(4.53)
.170(4.32)
.840(21.34)
.820(20.83)
.635(16.13)
.625(15.88)
.320(8.13)
.310(7.87)
.205(5.21)
.195(4.49)
30
.12(3.0)
.11(2.8)
.170(4.32)
.150(3.81)
.800(20.32)
.770(19.56)
PIN 1
PIN 3
Positive CT
Suffix "C"
+
CASE
PIN 2
.095
(2.4)
.050(1.27)
.045(1.14)
.030(0.8)
.020(0.5)
.225(5.7)
.205(5.2)
PIN 1
PIN 3
CASE
PIN 2
Negative CT
Suffix "A"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols SBR5030 SBR5035 SBR5040 SBR5045 SBR5050 SBR5060 Units
Maximum repetitive peak reverse voltage
VRRM
30
35
40
45
50
60 Volts
Maximum RMS voltage
VRMS
21
24
28
32
35
42 Volts
Maximum DC blocking voltage
VDC
30
35
40
45
50
60 Volts
Maximum average forward rectified current
at VR(equiv.)<0.2VR(DC) (See Fig 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 25A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
TA=25
TA=125
Typical thermal resistance (Note 2)
I(AV)
IFSM
VF
IR
R JC
50.0
400.0
0.65
10.0
100
1.4
Amps
Amps
0.70
Volts
mA
150
/W
Operating junction temperature range
TJ
-65 to +125
Storage temperature range
TSTG
-65 to +150
Notes:
(1) Pulse test: 300 S pulse width, 1% duty cycle
(2) Thermal resistance from junction to case