SBP820 Datasheet, PDF (1/2 Pages) Daesan Electronics Corp. – CURRENT 8.0Amperes VOLTAGE 20 to 100 Volts

SBP820 THRU SBP8100
CURRENT 8.0Amperes
VOLTAGE 20 to 100 Volts
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed:
250 /10 seconds, 0.25" (6.35mm) from case
Mechanical Data
· Case : JEDEC ITO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 grams
ITO-220A
10 ^0.5 3.2
4.5 ^0.2
2.7
1.3 ^0.2
0.7 ^0.2
0.5
5.08
2.4
PIN 1⁺
PIN 2
+
CASE
CasePositive
PIN 1
PIN 2⁺
CASE
Case Negative
Suffix"R"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Maximum repetitive peak reverse voltage
Symbols
VRRM
SBP SBP SBP SBP SBP SBP SBP
820 830 840 850 860 880 8100
20
30
40
50
60
80 100
Units
Volts
Maximum RMS voltage
VRMS
14
21
28
35
42
56
70 Volts
Maximum DC blocking voltage
VDC
20
30
40
50
60
80 100 Volts
Maximum average forward rectified current
(see Fig. 1)
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
TA=25
TA=125
Typical thermal resistance (Note 2)
I(AV)
IFRM
IFSM
VF
IR
R JC
8.0
16.0
150.0
Amps
Amps
Amps
0.65
0.75
0.80 0.85 Volts
1.0
mA
15
50
5.0
/W
Operating junction temperature range
TJ
-65 to +125
-65 to +150
Storage temperature range
TSTG
-65 to +150
Notes:
(1) Pulse test: 300 S pulse width, 1% duty cycle
(2) Thermal resistance from junction to case