MMBD701 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Schottky Barrier Diode

MMBD701
Surface Mount Schottky
Barrier Diode
Features
* Low Turn-on Voltage
For UHF and VHF detector application
* Alsosuitable for someothers Fast Switching
A
R_F and digital application
L
* Extremely LowMinority Carrier Lifetime-15ps(Typ)
3
* Low Reverse Leakage - I_R=200nA(Max)
* Very Low Capacitance-1.0pF(Max)@V=20VR
To p View
1
2
BS
Mechanical Data
* Case : Molded Plastic
* Terminals : Solderable per MIL-STD-202,
Method 208
* Polarity : See Diagrams Below
* Weight : 0.008 grams(approx.)
* Mounting Position : Any
V
G
C
D
H
K
J
3
1
2
3
CATHODE
1
ANODE
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25 ^oC
Derate above 25 ^oC
Operating Junction TEmperature Range
Storage Temperature Range
DEVICE MARKING
MMBD701 = 5H
Symbol
VR
PF
TJ
Tstg
MMBD101
Value
70
200
2.0
-55 to +125
-55 to +150
Unit
Volts
mW
mW/ ^oC
o_C
o_C
ELECTRICAL CHARACTERISTICS
(TA = 25 ^oC unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(I _R = 10 mAdc)
V _(BR)R
70
Total Capacitance
CT
(V _R = 20V f =1.0 MHz )Figure 1
Reverse Leakage(VR=35V) Figure 3
IR
Forward Voltage (I _F = 10 mAdc) Figure4
VF
Forward Voltage (I _F = 10 mAdc) Figure4
VF
Typ
Max
Unit
Volts
0.5
1.0
pF
9.0
200
NAdc
0.42
0.5
Vdc
0.7
1.0
Vdc