KBP005 Datasheet, PDF (1/2 Pages) Shanghai Sunrise Electronics – SINGLE PHASE SILICON BRIDGE RECTIFIER

KBP005 THRU KBP10
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 40A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
CURRENT 2.0 Amperes
VOLTAGE 50 to 1000 Volts
A
B
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Approx. Weight: 1.52 grams
· Mounting Position: Any
· Marking: Type Number
H
G
E
C
KBP
Dim Min Max
D
A
14.00 15.00
B
10.50 11.50
C
15.00
D
4.70 5.00
E
3.50 4.00
G
2.30 2.50
H
0.70 T ypical
All Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse voltage
Average Rectified Output Current @ TC=105
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load per element (JEDEC method)
Forward Voltage (per element)
@ IF=2.0 A
Peak Reverse Current at Rated
DC Blocking Voltage
@ TC=25
@ TC=125
Typical Junction Capacitance (Note 1)
VRMM
VRWM
VR
VR(RMS)
Io
IFSM
VFM
IRM
Cj
KBP
005
50
35
KBP
01
100
70
KBP
02
200
140
KBP
04
400
280
2.0
40
1.1
5.0
500
20
KBP
06
600
420
KBP
08
800
560
Typical Thermal Resistance,
Junction to Case (Note 2)
Operating and Storage Temperature Range
R JC
Tj
TSTG
30
-65 to +150
KBP
10
1000
700
Notes:
(1) Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 16mm aluminum plate heat sink.
(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
Units
Volts
Volts
Amps
Amps
Volts
A
pF
/W