E13003TO-220 Datasheet, PDF (1/2 Pages) Daesan Electronics Corp. – POWER TRANSISTOR

POWER TRANSISTOR E13003
SWITCHING REGULATOR APPLICATION
• High speed switching
• Suitable for switching regulator
and motor control
• Case : TO-220 molded plastic body
B
FT
4
Q
H
Z
1 23
A
U
K
NPN SILICON TRANSISTOR
L
V
G
N
FEATURES Tc=25^oC unless otherwise specified
Parameter
Collector dissipation
Collector current (DC)
Collector current (Pulse)
Operating and storage junction temperature range
D
Symbol
PC
IC
ICP
TJ, TSTG
TO-220
±T ±
S E ATING
PLANE
C
S
R
J
INCHE S
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.147
G 0.095 0.105
H 0.110 0.155
J 0.018 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ±±±
Z ±±± 0.080
MILLIME TE R S
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 3.73
2.42 2.66
2.80 3.93
0.46 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ±±±
±±± 2.04
Value
20
1.5
3
-55 ^oC to +150 ^oC
UNIT
W
A
A
o_C
ELECTRICAL CHARACTERISTICS Tc=25^oC unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCEsat
VBEsat
VBE
fT
tf
ts
Test conditions
IC=1mA , IE=0
IC=10mA , IB=0
IE=1mA , IC=0
VCB=700V , IE=0
VCE=400V , IB=0
VEB=9V , IC=0
VCE=2V , IC=0.5mA
VCE=10V , IC=0.5mA
IC=1A , IB=250mA
IC=1A , IB=250mA
IE=2A
VCE=10V , IC=100mA
f=1MHz
IC=1A , IB1=-IB2=0.2mA ,
VCC=100V
MIN
700
400
9
8
5
5
MAX
1
500
1
40
UNIT
V
V
V
mA
A
mA
1
V
1.2
V
3
V
MHz
0.5
S
2.5
S