BAS70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70
Surface Mount Schottky
Barrier Diode
Features
Low Turn-on Voltage
LowForward Voltage-0.75V(Max) @ I_F= 10 mA
Very Low Capacitance - Less Than 2.0pF @ 0V
Forhighspeedswitchingapplication, circuit
protection
Mechanical Data
A
L
3
To p View
BS
1
2
Case: Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
V
G
C
D
H
K
J
3
1
2
3
CATH O DE
1
AN O D E
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Maximum Rating S (T_J = 1505C unless otherwise noted)
Rating
Symbol
Reverse Voltage
VR
Forward Power Dissipation
@ TA = 25 ^OC
Derate above
25 ^OC
PF
Operating Junction and Storage Temperature Range
DE VI CE M AR KI NG
TJ, Tstg
BAS70 = BE
ELECTRICAL CHARACTERISTICS
(TA = 25 ^OC unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I_R = 10 mA)
Total Capacitance (V_R = 0 V, f = 1.0 MHz)
Reverse Leakage (V_R = 50 V)
(V_R = 70 V)
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 15 mAdc)
Symbol
V(BR)R
CT
IR
VF
VF
VF
Value
70
225
1.8
-55to +1 50
Min
Max
70
2.0
0.1
10
410
750
1.0
Unit
Volts
mW
mW/^OC
O_C
Unit
Volts
pF
mAdc
mVdc
mVdc
Vdc