BAS40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS40
Surface Mount Schottky
Barrier Diode
Features
Low Turn-on Voltage
Low Forward Voltage - 0.5V(Max) @ I_F = 30 mA
Very Low Capacitance - Less Than 5.0pF @ 1V
For high speed switching application, circuit protection
Mechanical Data
Case: Molded Plastic
Terminals: Solderable per MIL-STD-202,
V
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
A
L
3
To p Vie w
1
2
G
BS
C
H
3
1
2
3
CATHODE
K
1
ANODE
SOT-23
Dim Min Max
A ^{2.800 3.040}
B ^{1.200 1.400}
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H ^{0.013 0.100}
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS (TJ = 150^oC unless otherwise noted)
Rating
Symbol
Value
Unit
Rev ers e Volta ge
Fo rwa rd Po wer Dis sip atio n
@ TA = 25 ^o C
Der ate abo ve 25 ^{O C}
VR
40
Volts
PF
225
mW
1.8
mW / ^o C
Op era ting Jun ctio n and Sto rag e Tem per atu re Ran ge
DEVICE MARKING
T _J, Tstg
-55 to +1 50 ^o _C
BA S40 = B1
ELECTRICAL CHARACTERISTICS (TA = 25 ^oC unl ess oth erw ise not ed)
Characteristic
Symbol
Mi n
Ma x
Un it
Re ver se Bre ak do wn Volt ag e
(I _R = 10 mA)
V _{(BR )R}
40
Volt s
Tota l Ca pa cita nc e
(V _R = 1.0 V, f = 1.0 MH z)
Re ver se Le ak ag e
(V _R = 25 V)
Fo rw ard Volt ag e
(I _F = 0.1 mA dc )
CT
5.0
pF
IR
1.0
mAd c
VF
38 0
mV dc
Fo rw ard Volt ag e
(I _F = 30 mA dc )
VF
50 0
mV dc
Fo rw ard Volt ag e
(I _F = 10 0 mA dc )
VF
1.0
Vd c