1N60 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – GOLD BONDED GERMANIUM DIODE

1N60, 1N60P
Features
· Metal silicon junction, majority carrier conduction
· High current capability, Low forward voltage drop
· Extremely low reverse current lR
· Ultra speed switching characteristics
· Small temperature coefficient of forward characteristics
· Satisfactory Wave detection efficiency
· For use in RECORDER, TV, RADIO, TELEPHONE as detectors,
super high speed switching circuits, small current rectifier
Mechanical Data
· Case : DO-35 glass case
· Polarity : Color band denotes cathode end
· Weight : Approx. 0.13 gram
Absolute Ratings (Limiting Values)
Symbols
VRRM
lF
lFSM
TSTG/TJ
TL
Parameters
Zenerepetitive Peak Reverse Voltage
Forward Continuous Crrent
TA=25
Peak Forward Surge Current(t=1S)
Storage junction Temperature Range
Maximum Lead Temperature for soldering 10S at 4mm from Case
GERMANIUM DIODES
DO-35(GLASS)
0.075(1.9)
MAX.
DIA.
1.083(27.5)
MIN.
0.154(3.9)
MAX.
0.020(0.52)
MAX.
DIA.
1.083(27.5)
MIN.
Dimensions in inches and (millimeters)
Value
1N60
1N60P
40
45
30
50
150
500
-65 to+125
230
Units
Volts
mA
mA
Electrical characteristics
Symbols
Parameters
VF
lR
CJ
trr
R JA
Forward Voltage
Reverse Current
Junction Capacitance
Detection Effcienc(See diagram 4)
Revese Recovery time
Junction Amblent Thermal Resistance
Test Conditions
IF=1mA
IF=30mA
IF=200mA
VR=15V
VR=1V f=1MHz
VR=10V f=1MHz
1N60
1N60P
1N60
1N60P
1N60
1N60P
1N60
1N60P
VI=3V f=30MHz CL=10pF RL=3.8k
IF=IR=1mA Irr=1mA RC=100
Min
Value
Typ.
0.32
0.24
0.65
0.65
0.1
0.5
2.0
6.0
60
400
Max.
0.5
0.5
1.0
1.0
0.5
1.0
1
Units
Volts
A
pF
ns
/W