1N4448 Datasheet, PDF (1/3 Pages) Rectron Semiconductor – SIGNAL DIODE

1N4448
Features
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the Mini-MELF case with
the type designation LL4448
SMALL SIGNAL
SWITCHING DIODES
DO-35(GLASS)
0.075(1.9)
MAX.
DIA.
1.083(27.5)
MIN.
0.154(3.9)
MAX.
Mechanical Data
· Case: DO-35 glass case
· Weight: Approx. 0.13 gram
0.020(0.52)
MAX.
DIA.
1.083(27.5)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Reverse Voltage
Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25 and F 50Hz
VR
VRM
IAV
Surge forward current at t<1S and TJ=25
Power dissipation at TA=25
IFSM
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Value
75
100
150¹⁾
500
500¹⁾
175
-65 to +175
Electrical characteristics
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols
Min.
Forward voltage at IF=5mA
VF
at IF=10mA
VF
Leakage current at VR=20V
IR
at VR=75V
IR
at VR=20V, TJ=150
IR
Junction Capacitance at VR=VF=0V
CJ
Reverse breakdown voltage tested with 100 A Pulse
V(BR)R
100
Reverse Recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100
trr
Thermal resistance, junction to Ambient
Rectification efficiency at f=100MHz, VRF=2V
R JA
0.45
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Typ.
Max.
0.72
1
25
5
50
4
4
350¹⁾
Units
Volts
Volts
mA
mA
mW
Units
V
V
nA
A
A
pF
V
ns
K/W