GBL201 Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers

SIYU ^R
塑封硅整流桥堆
反向电压 50---1000V
正向电流 2.0 A
GBL
20.0 ± 0.5
3.5 ± 0.2
1.4 ± 0.2
1.0 ± 0.1
1.0 ± 0.2
5.0 ± 0.2 5.0 ± 0.2 5.0 ± 0.2
Unit：mm
0.5 ± 0.2
GBL201......GBL207
Single-phase Silicon Bridge Rectifier
Reverse Voltage 50 to 1000 V
Forward Current 2.0A
特征 Features
·反向漏电流低 Low reverse leakage
·正向浪涌承受能力较强 High forward surge capability
·浪涌承受能力：80 A Surge overload rating: 80 Amperes peak
·引线和管体皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据 Mechanical Data
·封装: 塑料封装 Case: Molded Plastic
·极性: 标记模压或印于本体 Polarity: Symbols molded or marked on body
·安装位置: 任意 Mounting Position: Any
极限值和温度特性 TA = 25℃ 除非另有规定。
Maximum Ratings & Thermal Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
VRRM
VRMS
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流 TC =100℃
Maximum average forward rectified current
VDC
IF(AV)
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
IFSM
GBL
201
50
35
50
GBL
202
100
70
100
GBL
203
200
140
200
GBL
204
400
280
400
2.0
80
GBL GBL GBL
205 206 207
600 800 1000
420 560 700
600 800 1000
单位
Unit
V
V
V
A
A
典型热阻 Typical thermal resistance
RθJA
47
℃/W
工作结温和存储温度
Tj, TSTG
-55--- +150
℃
Operating junction and storage temperature range
电特性 TA = 25℃ 除非另有规定。
Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
最大正向电压
Maximum forward voltage
最大反向电流
Maximum reverse current
IF =1.0A
符号 GBL GBL GBL GBL GBL GBL GBL 单位
Symbols 201 202 203 204 205 206 207 Unit
VF
1.05
V
TA= 25℃
TA = 125℃
IR
10
500
μA
大昌电子 DACHANG ELECTRONICS