EU1Z Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

SIYU ^R
塑封快恢复整流二极管
反向电压 200 --- 1000V
正向电流 0.25A
DO-41
1.0(25.4)
MIN
.034(0.9)
DIA
.028(0.7)
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
.107(2.7)
DIA
.080(2.0)
Unit：inch（mm）
EU1Z/EU1/EU1A/EU1B/EU1C
Plastic Fast Recover Rectifier
Reverse Voltage 200 to 1000V
Forward Current 0.25A
特征 Features
·反向漏电流低 Low reverse leakage
·正向浪涌承受能力较强 High forward surge capability
·高温焊接保证 High temperature soldering guaranteed:
260℃/10 秒, 0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅 (2.3kg) 拉力。 5 lbs. (2.3kg) tension
·引线和管体皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据 Mechanical Data
·端子: 镀锡轴向引线 Terminals: Plated axial leads
·极性: 色环端为负极 Polarity: Color band denotes cathode end
·安装位置: 任意 Mounting Position: Any
极限值和温度特性 TA = 25℃ 除非另有规定。
Maximum Ratings & Thermal Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
符号
EU1Z
EU1
EU1A
EU1B
EU1C
Symbols
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
最大均方根电压
Maximum RMS voltage
VRMS
140
280
420
560
700
最大直流阻断电压
Maximum DC blocking voltage
VDC
200
400
600
800
1000
最大正向平均整流电流
Maximum average forward rectified current
IF(AV)
0.25
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
IFSM
15
单位
Unit
V
V
V
A
A
典型热阻 Typical thermal resistance
RθJA
65
℃/W
工作结温和存储温度
Tj, TSTG
-55 --- +150
℃
Operating junction and storage temperature range
电特性 TA = 25℃ 除非另有规定。
Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
符号
EU1Z
EU1
EU1A
EU1B
EU1C
Symbols
最大正向电压
Maximum forward voltage
IF = 0.25A
VF
2.5
最大反向电流
Maximum reverse current
TA= 25℃
TA=100℃
IR
10
150
最大反向恢复时间
IF=0.5A IR=1.0A IRR=0.25A
trr
100
MAX. Reverse Recovery Time
典型结电容
Type junction capacitance
VR = 4.0V, f = 1MHz
Cj
15
10
单位
Unit
V
μA
nS
pF
大昌电子 DACHANG ELECTRONICS