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DB101S Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER | |||
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SIYU R
表é¢å®è£
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ååçµå 50---1000V
æ£åçµæµ 1.0 A
DBS
Unitï¼inchï¼mmï¼
DB101S ...... DB107S
Surface Mount Bridge-Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.0 A
ç¹å¾ Features
·é«çµæµæµªæ¶æ¿åè½å High surge current Capability
·é«æ¸©çæ¥ä¿è¯High tempererature soldering guaranteed:
260â/10 ç§ 260â/10 seconds
·å¼çº¿å管ä½ç符åRoHSæ åã
Lead and body according with RoHS standard
æºæ¢°æ°æ® Mechanical Data
·å°è£
: å¡æå°è£
Case: Molded Plastic
·ææ§: æ 记模åæå°äºæ¬ä½ Polarity: Symbols molded or marked on body
·å®è£
ä½ç½®: ä»»æ Mounting Position: Any
æéå¼å温度ç¹æ§ TA = 25â é¤éå¦æè§å®ã
Maximum Ratings & Thermal Characteristics Ratings at 25â ambient temperature unless otherwise specified.
符å·
åä½
Symbols DB101S DB102S DB103S DB104S DB105S DB106S DB107S Unit
æ大å¯éå¤å³°å¼ååçµå
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600 800 1000
V
æ大åæ¹æ ¹çµå
Maximum RMS voltage
VRMS
35
70 140 280 420 560 700
V
æ大ç´æµé»æçµå
Maximum DC blocking voltage
æ大æ£åå¹³åæ´æµçµæµ TC =100â
Maximum average forward rectified current
VDC
IF(AV)
50 100 200 400 600 800 1000
V
1.0
A
å³°å¼æ£å浪æ¶çµæµ 8.3msåä¸æ£å¼¦åæ³¢
Peak forward surge current 8.3 ms single half sine-wave
IFSM
30
A
å
¸åçé» Typical thermal resistance
å·¥ä½ç»æ¸©ååå¨æ¸©åº¦
Operating junction and storage temperature range
RθJA
Tj, TSTG
40
-55--- +150
â/W
â
çµç¹æ§ TA = 25â é¤éå¦æè§å®ã
Electrical Characteristics Ratings at 25â ambient temperature unless otherwise specified.
符å·
åä½
Symbols DB101S DB102S DB103S DB104S DB105S DB106S DB107S Unit
æ大æ£åçµå
Maximum forward voltage
IF = 1.0A
VF
1.1
V
æ大ååçµæµ
Maximum reverse current
TA= 25â
TA = 125â
IR
10
500
μA
å
¸åç»çµå®¹ VR = 4.0V, f = 1MHz
Cj
25
pF
Type junction capacitance
大æçµå DACHANG ELECTRONICS
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