MTE09N06E3 Datasheet, PDF (8/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
TO-220 Dimension
Marking:
Spec. No. : C912E3
Issued Date : 2015.03.24
Revised Date :
Page No. : 8/8
Device
Name
Date
Code
E09
N06
□□□□
123
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
Millimeters
Min. Max.
A 4.470 4.670
A1 2.520 2.820
b 0.710 0.910
b1 1.170 1.370
c 0.310 0.530
c1 1.170 1.370
D 10.010 10.310
E 8.500 8.900
Inches
Min. Max.
0.176 0.184
0.099 0.111
0.028 0.036
0.046 0.054
0.012 0.021
0.046 0.054
0.394 0.406
0.335 0.350
*: Typical
DIM
Millimeters
Min. Max.
Inches
Min. Max.
E1 12.060 12.460 0.475 0.491
e
2.540*
0.100*
e1 4.980 5.180 0.196 0.204
F 2.590 2.890 0.102 0.114
h 0.000 0.300 0.000 0.012
L 13.400 13.800 0.528 0.543
L1 3.560 3.960 0.140 0.156
Φ 3.735 3.935 0.147 0.155
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE09N06E3
CYStek Product Specification