MTD120C10KH8 Datasheet, PDF (8/13 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C945H8
Issued Date : 2015.06.01
Revised Date :
Page No. : 8/13
Typical Characteristics : Q2( P-channel)
Typical Output Characteristics
12
1.4
5V
10
1.2
8
10V,9V,8V,7V,6V
Brekdown Voltage vs Ambient Temperature
6
4.5V
1
4
-VGS=4V
2
0
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
0.8
-ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-VGS=4.5V
100
-VGS=10V
VGS=0V
1
0.8
0.6
Tj=25°C
Tj=150°C
0.4
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
420
380
-ID=2A
340
300
260
220
180
140
100
60
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
-VGS=10V, -ID=2A
RDSON@Tj=25°C : 91 mΩ typ.
1.6
1.4
1.2
1
0.8
VGS=-4.5V, ID=-1.5A
0.6
RDSON@Tj=25°C : 125mΩtyp
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD120C10KH8
CYStek Product Specification