MTC9930Q8 Datasheet, PDF (8/12 Pages) Cystech Electonics Corp. – 2N- and 2P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C839Q8
Issued Date : 2016.06.16
Revised Date :
Page No. : 8/12
Typical Characteristics(Cont.) : Q2(P-channel)
Capacitance vs Drain-to-Source Voltage
1000
1.6
Threshold Voltage vs Junction Tempearture
Ciss
1.4
1.2
-ID=1mA
100
C _oss
1
0.8
Crss
0.6
-ID=250μA
10
0
10
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
1
6
0.1
-VDS=10V
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
10 _Limited
1
0.1 _{TA=25°C, Tj=150°C}
VGS=-10V, RθJA=90°C/W
Single Pulse
0.01
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
4
VDS=-15V
2
ID=-4.4A
0
0
2
4
6
8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
6
5
4
3
2
TA=25°C
VGS=-10V
1
RθJA=90°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTC9930Q8
CYStek Product Specification