MTC4506J4 Datasheet, PDF (8/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C780J4
Issued Date : 2014.01.16
Revised Date :
Page No. : 8/13
Q2, P-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
1.4
Ciss
1.2
1000
1
Threshold Voltage vs Junction Tempearture
ID=-250μA
C _oss
100
10
0.1
Crss
1
10
100
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-48V
8
VDS=-30V
6
VDS=-15V
1
0.1
0.01
100
VDS=-5V
Pulsed
TA=25°C
0.1
1
10
100
-ID, Drain Current(A)
Maximum Safe Operating Area
10
100μs
1
1ms
0.1
TA=25°C, Tj=175C, VGS=-10V
θ_JA=90°C/W, Single Pulse
10ms
100ms
1s
DC
0.01
0.01
0.1
1
10
100
-ID, Drain-Source Voltage(V)
1000
4
2
ID=-4A
0
0
4
8
12
16
20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
18
16
14
12
10
8
6
4
TA=25°C, VGS=-10V
2 RθJA=90°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC4506J4
CYStek Product Specification