MTC2605G6 Datasheet, PDF (8/13 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C569G6
Issued Date : 2012.08.20
Revised Date : 2012.11.21
Page No. : 8/13
P-channel Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=-250μA
1.2
1
100
C _oss
0.8
Crss
0.6
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
0.4
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
50
40
TJ(MAX)=150°C
TA=25°C
θ_JA=110°C/W
30
Gate Charge Characteristics
5
VDS=-10V
4
ID=-2A
3
20
2
10
1
0
0
0.001 0.01
0.1
1
10
100
0
2
4
6
8
Pulse Width(s)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 _Limited
100μs
1
0.1 TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=110°C/W
Single Pulse
0.01
0.01
0.1
1
10
-VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
DC
100
MTC2605G6
Maximum Drain Current vs JunctionTemperature
3.5
3
2.5
2
1.5
1
0.5
TA=25°C, VGS=-4.5V, RθJA=110°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification