MTP425J3_15 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C391J3
Issued Date : 2012.07.19
Revised Date : 2015.03.20
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
60
TJ(MAX)=150°C
40
TA=25°C
θ_JA=50°C/W
50
40
30
30
20
20
10
10
Power Derating Curve
0
0.01
0.1
1
D=0.5
1
10
Pulse Width(s)
0
100
0 20 40 60 80 100 120 140 160
TC, Case Temperature(℃)
Transient Thermal Response Curves
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTP425J3
CYStek Product Specification