MTN5N50BI3 Datasheet, PDF (6/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C142I3
Issued Date : 2015.09.21
Revised Date :
Page No. : 6/10
Typical Characteristics(Cont.)
Drain Current vs Gate-Source Voltage
14
12
Ta=25°C
VDS=30V
10
8
VDS=10V
6
4
2
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Case
2000
1800
1600
1400
1200
1000
800
600
400
TJ(MAX)=150°C
TC=25°C
RθJC=2.6°C/W
200
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1.E-04
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=2.6°C/W
Single Pulse
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTN5N50BI3
CYStek Product Specification