MTC3587DL8 Datasheet, PDF (6/13 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
N-channel Typical Characteristics(Cont.)
Spec. No. : C093L8
Issued Date : 2016.09.30
Revised Date :
Page No. : 6/13
Typical Transfer Characteristics
30
VDS=5V
25
20
15
10
5
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
100
80
TJ(MAX)=150°C
TA=25°C
RθJA=85°C/W
60
40
20
0
5
0.001
0.01
0.1
1
10
100
Pulse Width(s)
1
D=0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
Transient Thermal Response Curves
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=85°C/W
0.001
1.E-04
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
MTC3587DL8
CYStek Product Specification